View BFP760_8285145.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

rf & protection devices data sheet revision 1.1, 2013-08-05 BFP760 low noise silicon germanium bipolar rf transistor
edition 2013-08-05 published by infineon technologies ag 81726 munich, germany ? 2013 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BFP760 data sheet 3 revision 1.1, 2013-08-05 trademarks of infineon technologies ag aurix?, c166?, canpak?, ci pos?, cipurse?, econopac k?, coolmos?, coolset?, corecontrol?, crossav e?, dave?, di-pol?, easypim?, econobridge?, econodual?, econopim?, econopack?, eicedriver?, eupec?, fcos?, hitfet?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, optimos?, origa?, powercode?; primarion?, pr imepack?, primestack?, pr o-sil?, profet?, rasic?, reversave?, satric?, si eget?, sindrion?, sipmos?, smartl ewis?, solid flash?, tempfet?, thinq!?, trenchstop?, tricore?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by flexray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrot echnique internationale. irda? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mipi? of mipi allianc e, inc. mips? of mips technologies, inc., u sa. murata? of murata manufacturing co., microwave office? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. openwave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of si rius satellite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of symbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. tektro nix? of tektronix inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilo g?, palladium? of cadence design systems, inc. vlynq? of texas instruments incorpor ated. vxworks?, wind river? of wind ri ver systems, inc. zetex? of diodes zetex limited. last trademarks update 2011-11-11 BFP760 , low noise silicon germani um bipolar rf transistor revision history: 2013-08-05 , revision 1.1 page subjects (major changes since last revision) this data sheet replaces the revision from 2012-12-04. pages 14,15,16: fig. 5-2, 5-4, 5-5, 5-6 corrected. table 5-4: outlier value for oip3 corrected.
BFP760 table of contents data sheet 4 revision 1.1, 2013-08-05 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1product brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.2 general ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.3 frequency dependent ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.4 characteristic dc diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.5 characteristic ac diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 simulation data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 7 package information sot343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 table of contents
BFP760 list of figures data sheet 5 revision 1.1, 2013-08-05 figure 4-1 total power dissipation p tot = f ( t s ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 figure 5-1 BFP760 testing circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 5-2 collector current vs . collector emitter voltage i c = f ( v ce ), i b = parameter in a. . . . . . . . . . . . . 15 figure 5-3 dc current gain h fe = f ( i c ), v ce = 3 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 5-4 collector current vs. base emitter voltage i c = f ( v be ), v ce = 2 v. . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 5-5 base current vs. base emitter forward voltage i b = f ( v be ), v ce = 2 v . . . . . . . . . . . . . . . . . . . . 16 figure 5-6 base current vs. base emitter reverse voltage i b = f ( v eb ), v ce = 2 v . . . . . . . . . . . . . . . . . . . . 17 figure 5-7 transition frequency f t = f ( i c ), f = 1 ghz, v ce = parameter in v . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 5-8 3rd order intercept point oip 3 = f ( i c ), z s = z l = 50 ? , v ce , f = parameters . . . . . . . . . . . . . . . . . 18 figure 5-9 3rd order intercept point at output oip 3 [dbm] = f ( i c, v ce ), z s = z l = 50 ? , f = 5.5 ghz . . . . . . . 19 figure 5-10 compression point at output op 1db [dbm] = f ( i c, v ce ), z s = z l = 50 ? , f = 5.5 ghz . . . . . . . . . . 19 figure 5-11 collector base capacitance c cb = f ( v cb ), f = 1 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 5-12 gain g ma , g ms , i s 21 i2 = f ( f ), v ce = 3 v, i c = 30 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 5-13 maximum power gain g max = f ( i c ), v ce = 3 v, f = parameter in ghz . . . . . . . . . . . . . . . . . . . . . . 21 figure 5-14 maximum power gain g max = f ( v ce ), i c = 30 ma, f = parameter in ghz . . . . . . . . . . . . . . . . . . . 21 figure 5-15 input reflection coefficient s 11 = f ( f ), v ce = 3 v, i c = 10 / 30 ma . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 5-16 source impedance for minimum noise figure z opt = f ( f ), v ce = 3 v, i c = 10 / 30 ma . . . . . . . . . . 22 figure 5-17 output reflection coefficient s 22 = f ( f ), v ce = 3 v, i c = 10 / 30 ma. . . . . . . . . . . . . . . . . . . . . . . . 23 figure 5-18 noise figure nf min = f ( f ), v ce = 3 v, i c = 10 / 30 ma, z s = z opt . . . . . . . . . . . . . . . . . . . . . . . . . . 23 figure 5-19 noise figure nf min = f ( i c ), v ce = 3 v, z s = z opt , f = parameter in ghz . . . . . . . . . . . . . . . . . . . . . 24 figure 5-20 noise figure nf 50 = f ( i c ), v ce = 3 v, z s = 50 ? , f = parameter in ghz . . . . . . . . . . . . . . . . . . . . 24 figure 7-1 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 7-2 package footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 7-3 marking example (marking BFP760: r6s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 7-4 tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 list of figures
BFP760 list of tables data sheet 6 revision 1.1, 2013-08-05 table 3-1 maximum ratings at t a = 25 c (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 4-1 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 5-1 dc characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5-2 general ac characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5-3 ac characteristics, v ce = 3 v, f = 0.9 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 5-4 ac characteristics, v ce = 3 v, f = 1.8 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 5-5 ac characteristics, v ce = 3 v, f = 2.4 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 5-6 ac characteristics, v ce = 3 v, f = 3.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 5-7 ac characteristics, v ce = 3 v, f = 5.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 list of tables
BFP760 product brief data sheet 7 revision 1.1, 2013-08-05 1 product brief the BFP760 is a linear and very low no ise wideband npn bipolar rf transistor . the device is based on infineon?s reliable high volume silicon germaniu m carbon (sige:c) heteroj unction bipolar technolo gy. the collector design supports voltages up to v ceo = 4.0 v and currents up to i c = 70 ma. with its high linearity at currents as low as 10 ma (see fig. 5-8) the device support s energy efficient designs. the typical transition frequency is approximately 45 ghz, hence the device offers high power gain at freq uencies up to 9 ghz in amplifier applications. the device is housed in an easy to use plastic package with visible leads.
BFP760 features data sheet 8 revision 1.1, 2013-08-05 2 features applications as low noise amplifier (lna) in ? mobile and fixed connectivity applications: wl an 802.11a/b/g/n/ac, wimax 2.5/3.5 ghz, bluetooth ? satellite communication systems: navigation systems (gps, glona ss), satellite radio (sdars, dab) and c-band lnb ? multimedia applications such as mobile/portable tv, catv, fm radio ? umts/lte mobile phone applications ? ism applications like rke, am r and zigbee, as well as for emerging wireless applications as discrete active mixer, buffer amplifier in vcos attention: esd (electrostatic discharge) sensitive device, observe handling precautions ? very low noise amplifier based on infineons reliable, high volume sige:c technology ? high linearity oip 3 = 27 dbm @ 5.5 ghz, 3 v, 30 ma ? high transition frequency f t = 45 ghz @ 1 ghz, 3 v, 35ma ? nf min = 0.95 db @ 5.5 ghz, 3 v, 10 ma ? maximum power gain gms = 21.5 db @ 3.5 ghz, 3 v, 30 ma ? low power consumption, ideal for mobile applications ? easy to use pb-free (rohs compliant) and halogen-free standard package with visible leads ? qualification report according to aec-q101 available product name package pin configuration marking BFP760 sot343 1 = b 2 = e 3 = c 4 = e r6s 1 2 3 4
BFP760 maximum ratings data sheet 9 revision 1.1, 2013-08-05 3 maximum ratings attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. table 3-1 maximum ratings at t a = 25 c (unless otherwise specified) parameter symbol values unit note / test condition min. max. collector emitter voltage v ceo ? ? 4.0 3.5 v open base t a = 25 c t a = -55 c collector emitter voltage v ces ? 13 v e-b short circuited collector base voltage v cbo ? 13 v open emitter emitter base voltage v ebo ? 1.2 v open collector collector current i c ?70 ma? base current i b ?4 ma? total power dissipation 1) 1) t s is the soldering point temperature. t s is measured on the emitter lead at the soldering point of the pcb. p tot ?240mw t s 95 c junction temperature t j ?150c? storage temperature t stg -55 150 c ?
BFP760 thermal characteristics data sheet 10 revision 1.1, 2013-08-05 4 thermal characteristics figure 4-1 total power dissipation p tot = f ( t s ) table 4-1 thermal resistance parameter symbol values unit note / test condition min. typ. max. junction - soldering point 1) 1)for the definition of r thjs please refer to application note an077 (thermal resistance calculation) r thjs ?230?k/w? 0 25 50 75 100 125 150 0 40 80 120 160 200 240 280 t s [c] p tot [mw]
BFP760 electrical characteristics data sheet 11 revision 1.1, 2013-08-05 5 electrical characteristics 5.1 dc characteristics 5.2 general ac characteristics table 5-1 dc characteristics at t a = 25 c parameter symbol values unit note / test condition min. typ. max. collector emitter breakdown voltage v (br)ceo 44.7?v i c =1ma, i b =0 open base collector emitter leakage current i ces ?10 1 400 1) 40 1) 1) maximum values not limited by the device but by the sh ort cycle time of the 100% test na v ce =13 v, v be =0 v ce =5 v, v be =0 e-b short circuited collector base leakage current i cbo ?140 1) na v cb =5v, i e =0 open emitter emitter base leakage current i ebo ?140 1) na v eb =0.5v, i c =0 open collector dc current gain h fe 160 250 400 v ce =3v, i c = 35 ma pulse measured table 5-2 general ac characteristics at t a =25c parameter symbol values unit note / test condition min. typ. max. transition frequency f t ?45?ghz v ce =3v, i c =35ma f =1ghz collector base capacitance c cb ? 0.13 0.2 pf v cb =3v, v be =0 f =1mhz emitter grounded collector emitte r capacitance c ce ?0.42?pf v ce =3v, v be =0 f =1mhz base grounded emitter base capacitance c eb ?0.65?pf v eb =0.5v, v cb =0 f =1mhz collector grounded
BFP760 electrical characteristics data sheet 12 revision 1.1, 2013-08-05 5.3 frequency dependent ac characteristics measurement setup is a test fixture with bias t?s in a 50 ? system, t a = 25 c figure 5-1 BFP760 testing circuit in out bias -t bias-t b (pin 1) e c e vc top view vb
BFP760 electrical characteristics data sheet 13 revision 1.1, 2013-08-05 table 5-3 ac characteristics, v ce = 3 v, f = 0.9 ghz parameter symbol values unit note / test condition min. typ. max. power gain db maximum power gain g ms ?29? i c =30ma transducer gain | s 21 | 2 ?28? i c =30ma minimum noise figure db minimum noise figure nf min ?0.5? i c =10ma associated gain g ass ?25.5? i c =10ma linearity dbm z s = z l =50 ? 1 db compression point at output op 1db ?14? i c =30ma 3rd order intercept point at output oip 3 ?27? i c =30ma table 5-4 ac characteristics, v ce = 3 v, f = 1.8 ghz parameter symbol values unit note / test condition min. typ. max. power gain db maximum power gain g ms ?25? i c =30ma transducer gain | s 21 | 2 ?22? i c =30ma minimum noise figure db minimum noise figure nf min ?0.55? i c =10ma associated gain g ass ?20.5? i c =10ma linearity dbm z s = z l =50 ? 1 db compression point at output op 1db ?14.5? i c =30ma 3rd order intercept point at output oip 3 ?28? i c =30ma table 5-5 ac characteristics, v ce = 3 v, f = 2.4 ghz parameter symbol values unit note / test condition min. typ. max. power gain db maximum power gain g ms ?23.5? i c =30ma transducer gain | s 21 | 2 ?20? i c =30ma minimum noise figure db minimum noise figure nf min ?0.6? i c =10ma associated gain g ass ?19? i c =10ma linearity dbm z s = z l =50 ? 1 db compression point at output op 1db ?14? i c =30ma 3rd order intercept point at output oip 3 ?28? i c =30ma
BFP760 electrical characteristics data sheet 14 revision 1.1, 2013-08-05 note: oip 3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.2 mhz to 12 ghz table 5-6 ac characteristics, v ce = 3 v, f = 3.5 ghz parameter symbol values unit note / test condition min. typ. max. power gain db maximum power gain g ms ?21.5? i c =30ma transducer gain | s 21 | 2 ?16.5? i c =30ma minimum noise figure db minimum noise figure nf min ?0.7? i c =10ma associated gain g ass ?16? i c =10ma linearity dbm z s = z l =50 ? 1 db compression point at output op 1db ?14.5? i c =30ma 3rd order intercept point at output oip 3 ?28.5? i c =30ma table 5-7 ac characteristics, v ce = 3 v, f = 5.5 ghz parameter symbol values unit note / test condition min. typ. max. power gain db maximum power gain g ms ?16.5? i c =30ma transducer gain | s 21 | 2 ?12? i c =30ma minimum noise figure db minimum noise figure nf min ?0.95? i c =10ma associated gain g ass ?12.5? i c =10ma linearity dbm z s = z l =50 ? 1 db compression point at output op 1db ?13? i c =30ma 3rd order intercept point at output oip 3 ?27? i c =30ma
BFP760 electrical characteristics data sheet 15 revision 1.1, 2013-08-05 5.4 characteristic dc diagrams figure 5-2 collector current vs . collector emitter voltage i c = f ( v ce ), i b = parameter in a figure 5-3 dc current gain h fe = f ( i c ), v ce = 3 v 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 20 25 30 35 40 45 50 55 v ce [v] i c [ma] 20 a 40 a 60 a 80 a 100 a 120 a 140 a 160 a 180 a 200 a 220 a 10 0 10 1 10 2 10 2 10 3 i c [ma] h fe
BFP760 electrical characteristics data sheet 16 revision 1.1, 2013-08-05 figure 5-4 collector current vs. base emitter voltage i c = f ( v be ), v ce = 2 v figure 5-5 base current vs. base emitter forward voltage i b = f ( v be ), v ce = 2 v 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 10 ?4 10 ?3 10 ?2 10 ?1 10 0 10 1 10 2 v be [v] i c [ma] 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 10 ?6 10 ?5 10 ?4 10 ?3 10 ?2 10 ?1 10 0 v be [v] i b [ma]
BFP760 electrical characteristics data sheet 17 revision 1.1, 2013-08-05 figure 5-6 base current vs. base emitter reverse voltage i b = f ( v eb ), v ce = 2 v 0.6 0.7 0.8 0.9 1 1.1 1.2 10 ?13 10 ?12 10 ?11 v eb [v] i b [a]
BFP760 electrical characteristics data sheet 18 revision 1.1, 2013-08-05 5.5 characteristic ac diagrams figure 5-7 transition frequency f t = f ( i c ), f = 1 ghz, v ce = parameter in v figure 5-8 3rd order intercept point oip 3 = f ( i c ), z s = z l = 50 ? , v ce , f = parameters 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 45 50 3.50v 3.00v 2.50v 2.00v 1.50v 1.00v i c [ma] f t [ghz] 4.00v 0 10 20 30 40 50 0 5 10 15 20 25 30 i c [ma] oip 3 [dbm] 2v, 2400mhz 3v, 2400mhz 2v, 5500mhz 3v, 5500mhz
BFP760 electrical characteristics data sheet 19 revision 1.1, 2013-08-05 figure 5-9 3rd order intercept point at output oip 3 [dbm] = f ( i c, v ce ), z s = z l = 50 ? , f = 5.5 ghz figure 5-10 compression point at output op 1db [dbm] = f ( i c, v ce ), z s = z l = 50 ? , f = 5.5 ghz 1 2 3 4 5 6 7 8 9 10 1 1 11 12 1 2 13 1 3 14 14 15 15 15 16 16 16 17 17 1 7 18 18 1 8 19 19 1 9 20 20 2 0 21 21 21 22 22 2 2 23 23 23 24 24 24 25 25 25 26 26 26 26 27 27 2 7 28 28 v ce [v] i c [ma] 1 1.5 2 2.5 3 3.5 4 10 15 20 25 30 35 40 45 50 ?4 ?3 ?3 ?3 ?2 ?2 ?2 ?2 ?1 ?1 ?1 ?1 0 0 0 0 1 1 1 1 2 2 2 2 3 3 3 3 4 4 4 4 4 5 5 5 5 5 6 6 6 6 6 7 7 7 7 7 8 8 8 8 8 9 9 9 9 10 10 10 10 11 11 11 12 12 12 13 13 14 14 15 v ce [v] i c [ma] 1 1.5 2 2.5 3 3.5 4 5 10 15 20 25 30 35 40
BFP760 electrical characteristics data sheet 20 revision 1.1, 2013-08-05 figure 5-11 collector base capacitance c cb = f ( v cb ), f = 1 mhz figure 5-12 gain g ma , g ms , i s 21 i2 = f ( f ), v ce = 3 v, i c = 30 ma 0 0.6 1.2 1.8 2.4 3 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 v cb [v] c cb [pf] 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 f [g] g [db] g ms g ma |s 21 | 2
BFP760 electrical characteristics data sheet 21 revision 1.1, 2013-08-05 figure 5-13 maximum power gain g max = f ( i c ), v ce = 3 v, f = parameter in ghz figure 5-14 maximum power gain g max = f ( v ce ), i c = 30 ma, f = parameter in ghz 0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30 35 40 i c [ma] g max [db] 10.00ghz 5.50ghz 3.50ghz 0.90ghz 0.45ghz 2.40ghz 1.90ghz 1.50ghz 0.15ghz 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 20 25 30 35 40 v ce [v] g max 10.00ghz 5.50ghz 3.50ghz 2.40ghz 0.90ghz 0.45ghz 0.15ghz 1.90ghz 1.50ghz
BFP760 electrical characteristics data sheet 22 revision 1.1, 2013-08-05 figure 5-15 input reflection coefficient s 11 = f ( f ), v ce = 3 v, i c = 10 / 30 ma figure 5-16 source impedance for minimum noise figure z opt = f ( f ), v ce = 3 v, i c = 10 / 30 ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.03 0.03 to 10 ghz 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.03 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 30ma 10ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.9 1.8 2.4 3.5 5.5 8.0 0.9 1.8 2.4 3.5 5.5 8.0 30ma 10ma
BFP760 electrical characteristics data sheet 23 revision 1.1, 2013-08-05 figure 5-17 output reflection coefficient s 22 = f ( f ), v ce = 3 v, i c = 10 / 30 ma figure 5-18 noise figure nf min = f ( f ), v ce = 3 v, i c = 10 / 30 ma, z s = z opt 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 10.0 0.03 0.03 to 10 ghz 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 0.03 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 30ma 10ma 0 1 2 3 4 5 6 7 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 f [ghz] nf min [db] i c = 10ma i c = 30ma
BFP760 electrical characteristics data sheet 24 revision 1.1, 2013-08-05 figure 5-19 noise figure nf min = f ( i c ), v ce = 3 v, z s = z opt , f = parameter in ghz figure 5-20 noise figure nf 50 = f ( i c ), v ce = 3 v, z s = 50 ? , f = parameter in ghz note: the curves shown in this chapter have been generate d using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. t a =25c 0 5 10 15 20 25 30 35 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 i c [ma] nf min [db] f = 0.9ghz f = 1.8ghz f = 2.4ghz f = 3.5ghz f = 5.5ghz f = 8ghz 0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 i c [ma] nf50 [db] f = 0.9ghz f = 1.8ghz f = 2.4ghz f = 3.5ghz f = 5.5ghz f = 8ghz
BFP760 simulation data data sheet 25 revision 1.1, 2013-08-05 6 simulation data for the spice gummel poon (gp) model as well as fo r the s-parameters (including noise parameters) please refer to our internet website. please consult our website and download the latest versions before actually starting your design. you find the BFP760 spice gp model in the internet in mwo- and ads-format, which you can import into these circuit simulation tools very quickly and conveniently. the model already co ntains the package parasitics and is ready to use for dc and high frequency simulations. the terminals of the model circ uit correspond to the pin configuration of the device. the model parameters have been extracted and verified up to 10 ghz using typical devices. the BFP760 spice gp model reflects the typical dc- and rf-performance within the limitations which are given by the spice gp model itself. besides the dc characte ristics all s-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.
BFP760 package information sot343 data sheet 26 revision 1.1, 2013-08-05 7 package information sot343 figure 7-1 package outline figure 7-2 package footprint figure 7-3 marking example (marking BFP760: r6s) figure 7-4 tape dimensions sot343-po v08 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 2 0.2 0.1 0.9 3 2 4 1 a +0.1 0.6 a m 0.2 1.3 -0.05 -0.05 0.15 0.1 m 4x 0.1 0.1 min. 0.6 sot343-fp v08 0.8 1.6 1.15 0.9 xys 56 date code (ym) 2005, june type code manufacturer pin 1 sot323-tp v02 0.2 4 2.15 8 2.3 1.1 pin 1
published by infineon technologies ag www.infineon.com

▲Up To Search▲

Price & Availability of BFP760

	To Download BFP760 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .